Typical Electrical And Thermal Characteristics
8
25
I D = -0.2A
V DS = -5V
-10
15
6
-15
10
C iss
C oss
4
5
3
2
2
f = 1 MHz
V GS = 0 V
Crs s
0
0
0.1
0.2
0.3
0.4
0.5
1
0.1
0.3
1
2
5
10
15
25
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics .
s
0.8
0.5
0.2
RD
S(
ON
)
LIM
IT
10
0m
10
s
1m
m
s
5
4
3
SINGLE PULSE
R θ JA =See note 1b
T A = 25°C
0.1
1s
DC
2
0.05
V GS = -2.7V
SINGLE PULSE
1
0.02
0.01
1
R θ JA =See Note 1b
T A = 25°C
2 5 10
- V DS , DRAIN-SOURCE VOLTAGE (V)
20
40
0
0.01
0.1
1 10
SINGLE PULSE TIME (SEC)
100
300
Figure 9. Maximum Safe Operating Area.
1
Figure 10. Single Pulse Maximum Power
Dissipation.
0.5
D = 0.5
R θ JA (t) = r(t) * R θ JA
0.2
0.1
0.2
0.1
P(pk)
R θ JA = See Note 1b
0.05
0.05
0.02
t 1
t 2
0.02
0.01
0.01
Single Pulse
T J - T A = P * R θ JA (t)
Duty Cycle, D = t 1 / t 2
0.0001
0.001
0.01
0.1
1
10
100
300
t 1 , TIME (sec)
Figure 11. Transient Thermal Response Curve .
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
FDC6302P Rev.C
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FDC6302P 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL P MOSFET -25V -120mA SUPERSOT6
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